Title :
24 mΩcm2 680 V silicon superjunction MOSFET
Author :
Onishi, Y. ; Iwamoto, S. ; Sato, Takao ; Nagaoka, T. ; Ueno, K. ; Fujihira, T.
Author_Institution :
Fuji Hitachi Power Semicond. Co. Ltd, Matsumoto, Japan
Abstract :
A silicon superjunction MOSFET with very low specific on-resistance, RonA, and very low RonQgd, where Qgd is the gate-to-drain switching charge, is reported. RonA and RonQgd achieved are 24 mΩcm2 and 2.0 ΩnC at the breakdown voltage of 680 V, which are the lowest among the reported values for high-voltage silicon power MOSFETs with breakdown voltage above 500 V. Numerical analysis and discussions on the design of the buried epitaxial superjunction technology are also presented.
Keywords :
buried layers; electric resistance; numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; 500 V; 680 V; Si; breakdown voltage; buried epitaxial superjunction technology design; gate-to-drain switching charge; numerical analysis; silicon power MOSFET; silicon superjunction MOSFET; specific on-resistance; switching charge-on-resistance product; Breakdown voltage; Doping profiles; Epitaxial layers; MOSFET circuits; Numerical analysis; Power MOSFET; Power conversion; Power supplies; Robustness; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016216
