Characterization of the response of a double side μ-strip silicon detector to X-rays in the diagnostic energy range

Author

Bandettini, A. ; Bencivelli, W. ; Bertolucci, E. ; Bottigli, U. ; Conti, M. ; Del Guerra, A. ; Fantacci, M.E. ; Randaccio, P. ; Rosso, V. ; Russo, P. ; Stefanini, A.

Author_Institution

Sezione INFN, Pisa, Italy

fYear

1992

fDate

25-31 Oct 1992

Firstpage

92

Abstract

The use of a double sided μ-strip silicon crystal for X-ray detection is being investigated. The detector is 300 μm thick and the read-out pitch is 100 μm for both sides. It operates in capacitance charge division mode by means of floating strips between read-out strips. The detector has been irradiated by ²⁴¹Am and ¹⁰⁹Cd sources. Different zones within the 100-μm read-out pitch have been individually exposed. The following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; and (d) the spatial resolution. The absolute efficiency of the detector has been measured at three energy values

Keywords

X-ray detection and measurement; position sensitive particle detectors; semiconductor counters; 300 micron; Si; X-rays; absolute efficiency; capacitance charge division mode; charge collection mechanism; double sided microstrip Si detector; energy resolution; relative detection efficiency; spatial resolution; Capacitance measurement; Capacitors; Computer networks; Energy resolution; Preamplifiers; Predictive models; Silicon; Strips; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301145

Filename

301145