Title :
Characterization of the response of a double side μ-strip silicon detector to X-rays in the diagnostic energy range
Author :
Bandettini, A. ; Bencivelli, W. ; Bertolucci, E. ; Bottigli, U. ; Conti, M. ; Del Guerra, A. ; Fantacci, M.E. ; Randaccio, P. ; Rosso, V. ; Russo, P. ; Stefanini, A.
Author_Institution :
Sezione INFN, Pisa, Italy
Abstract :
The use of a double sided μ-strip silicon crystal for X-ray detection is being investigated. The detector is 300 μm thick and the read-out pitch is 100 μm for both sides. It operates in capacitance charge division mode by means of floating strips between read-out strips. The detector has been irradiated by 241Am and 109Cd sources. Different zones within the 100-μm read-out pitch have been individually exposed. The following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; and (d) the spatial resolution. The absolute efficiency of the detector has been measured at three energy values
Keywords :
X-ray detection and measurement; position sensitive particle detectors; semiconductor counters; 300 micron; Si; X-rays; absolute efficiency; capacitance charge division mode; charge collection mechanism; double sided microstrip Si detector; energy resolution; relative detection efficiency; spatial resolution; Capacitance measurement; Capacitors; Computer networks; Energy resolution; Preamplifiers; Predictive models; Silicon; Strips; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301145
