DocumentCode
1926227
Title
3 kV 600 A 4H-SiC high temperature diode module
Author
Sugawara, Y. ; Takayama, D. ; Asano, K. ; Singh, R. ; Kodama, H. ; Ogata, S. ; Hayashi, T.
Author_Institution
Tech. Res. Center, Kansai Electr. Power Co., Amagasaki, Japan
fYear
2002
fDate
2002
Firstpage
245
Lastpage
248
Abstract
A 3 kV 600 A 4H-SiC high temperature diode module has been developed for use in electricity supply applications, which utilizes a pressure contact flat package type module and includes five 6 mm×6 mm SiC diode chips. The diode module does not get oxidized in the air even at 500°C and has excellent electrical performances at high temperature.
Keywords
high-temperature electronics; high-voltage engineering; multichip modules; power electronics; power semiconductor diodes; silicon compounds; wide band gap semiconductors; 3 kV; 4H-SiC high temperature diode module; 500 C; 6 mm; 600 A; SiC; SiC diode chips; electricity supply applications; high current operation; high temperature electrical performance; high voltage operation; module air oxidization; pressure contact flat package module; Contacts; Copper alloys; Electrodes; Fabrication; Impurities; Packaging; Semiconductor diodes; Silicon carbide; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN
0-7803-7318-9
Type
conf
DOI
10.1109/ISPSD.2002.1016217
Filename
1016217
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