DocumentCode :
1926241
Title :
Large area, low capacitance Si(Li) detectors for low noise, high rate X-ray applications
Author :
Rossington, C.S. ; Fine, P.M. ; Madden, N.W.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
fYear :
1992
fDate :
25-31 Oct 1992
Abstract :
Summary form only. Large-area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier shaping times. A typical 6-mm-thick device with an active area of 175 mm2 has a capacitance of 0.5 pF for a conventional planar device with equivalent thickness and area. These low-capacitance detectors, in conjunction with low-capacitance FETs, will result in spectrometers capable of running at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of X-ray energies at 77 K is comparable to that of typical state-of-the-art conventional Si(Li) devices. The spectral response to 2-60 keV X-rays was investigated
Keywords :
X-ray detection and measurement; semiconductor counters; 2 to 60 keV; 6 mm; 77 K; Si(Li) detectors; Si:Li; large area; low capacitance; spectral response; Capacitance; Energy resolution; FETs; Fabrication; Geometry; Noise reduction; Noise shaping; X-ray applications; X-ray detection; X-ray detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
Type :
conf
DOI :
10.1109/NSSMIC.1992.301146
Filename :
301146
Link To Document :
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