Title :
Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures
Author :
Nakamura, Katsumi ; Kusunoki, Shigeru ; Nakamura, Hideki ; Ishimura, Youichi ; Tomomatsu, Yoshifumi ; Minato, Tadaharu
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
In order to improve the total performance of nonpunch-through (NPT) type trench IGBT for the 1200∼1700 V region, a triple combination of concepts is adopted: "wide cell pitch" and "carrier stored trench-gate bipolar transistor (CSTBT)" for the emitter side, and "light punch-through (LPT)" structure for the collector side. The wide cell pitch LPT-CSTBT demonstrates lower on-state voltage, lower switching loss, lower junction leakage current than that of conventional NPT trench IGBT, and relatively large short circuit capability. In addition, our device shows excellent gate dielectric reliability by utilizing CVD gate oxide film. The LPT-CSTBT with CVD gate dielectric is a promising candidate for high voltage power devices, because its performance is approaches that of punch-through (PT) trench IGBTs.
Keywords :
CVD coatings; dielectric thin films; insulated gate bipolar transistors; isolation technology; leakage currents; oxidation; power bipolar transistors; semiconductor device measurement; semiconductor device reliability; 1200 to 1700 V; CVD gate oxide film; LPT structures; NPT type trench IGBT; carrier stored trench-gate bipolar transistor; collector side; emitter side; gate dielectric reliability; high voltage power devices; junction leakage current; light punch-through structures; nonpunch-through type trench IGBT; on-state voltage; punch-through trench IGBT performance; short circuit capability; switching loss; wide cell pitch CSTBTs; wide cell pitch LPT-CSTBT; wide cell pitch concept; Bipolar transistors; Capacitance; Circuits; Dielectrics; Insulated gate bipolar transistors; Leakage current; Low voltage; Power engineering and energy; Switching loss; Ultra large scale integration;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016225
