Title :
Enhanced IGBT self clamped inductive switching (SCIS) capability through vertical doping profile and cell optimization
Author :
Yedinak, J. ; Wojslawowicz, J. ; Czeck, B. ; Baran, R. ; Reichl, D. ; Lange, D. ; Shenoy, P. ; Doiny, G.
Author_Institution :
Discrete Power Product Dev., Fairchild Semicond., Mountaintop, PA, USA
Abstract :
In this paper, we analyze the impact of cell and vertical structure design to enhance the energy handling capability of the IGBT used in automotive ignition applications. The self-clamped inductive switching (SCIS) capability of the IGBT is presented both experimentally and through non-isothermal two-dimensional numerical simulations. It is shown that the SCIS energy density capability can be increased by up to 35% by optimization of the cell and vertical structure.
Keywords :
automotive electronics; doping profiles; electric ignition; insulated gate bipolar transistors; numerical analysis; optimisation; power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; IGBT SCIS capability; IGBT self clamped inductive switching capability; SCIS energy density capability; automotive ignition applications; cell design; cell optimization; energy handling capability; nonisothermal 2D numerical simulations; vertical doping profile; vertical structure design; Automotive engineering; Clamps; Coils; Design optimization; Doping profiles; Ignition; Insulated gate bipolar transistors; Medical simulation; Power semiconductor switches; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016228
