Title :
Resistance Determination for Sub-100-nm Carbon Nanotube Vias
Author :
Changjian Zhou ; Vyas, Anshul A. ; Wilhite, Patrick ; Wang, Peng ; Mansun Chan ; Yang, Cary Y.
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
We report resistance results from carbon nanotube (CNT) vias of widths from 150 to 60 nm for potential application in integrated circuits technology. Selective CNT growth inside the vias with an areal density of 2×1011/cm2 is achieved with a statistical average resistance of 1.7 kΩ with standard deviation between 420 Ω and 7.1 kΩ, and lowest resistance of 150 Ω for 60 nm vias, the lowest reported value for sub-100 nm-CNT vias. Statistical analysis yields a best-case projected value of 295 Ω for a 30 nm via, within one order of magnitude of its copper and tungsten counterparts.
Keywords :
carbon nanotubes; integrated circuit interconnections; vias; carbon nanotube vias; integrated circuit technology; resistance 295 ohm; resistance 420 ohm to 7.1 kohm; resistance determination; selective CNT growth; size 150 nm to 60 nm; size 30 nm; statistical analysis; Carbon nanotubes; Contact resistance; Electrical resistance measurement; Integrated circuit interconnections; Metals; Resistance; Standards; Carbon nanotube (CNT); Interconnect; interconnect; via;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2366301
