A 30 V class extremely low on-resistance meshed trench lateral power MOSFET

Author

Sugi, A. ; Tabuchi, K. ; Sawada, M. ; Kajiwara, S. ; Matsubara, K. ; Fujishima, N. ; Salama, C.A.T.

Author_Institution

Devices Technol. Lab., Fuji Electr. Co. Ltd., Nagano, Japan

fYear

2002

fDate

2002

Firstpage

297

Lastpage

300

Abstract

A meshed trench lateral power MOSFET with a trench bottom source contact (M-TLPM/S) is proposed, fabricated, and characterized. The M-TLPM/S is formed along the sidewalls of the meshed trench. The trench bottom source contact is formed between the drain islands in one direction only (contact area), resulting in increased channel density in reduced cell pitch. The fabricated M-TLPM/S features device pitches in the contact and gate areas of 3.0 μm and 1.3 μm respectively, and exhibits a specific on-resistance of 8.4 mΩ-mm² for a breakdown voltage of 31 V.

Keywords

electric resistance; isolation technology; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; 1.3 micron; 3 micron; 31 V; M-TLPM/S formation; breakdown voltage; cell pitch; channel density; contact area; device pitch; drain islands; gate area; meshed trench lateral power MOSFET; meshed trench sidewalls; on-resistance; specific on-resistance; trench bottom source contact; Contacts; Energy management; Etching; Laboratories; MOSFET circuits; Power MOSFET; Power system management; Process design; Research and development; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016230

Filename

1016230