• DocumentCode
    1926568
  • Title

    Silicon TSV interposers with embedded capacitors for high performance VLSI packaging

  • Author

    Vodrahalli, Nagesh

  • Author_Institution
    Allvia Technol., Sunnyvale, CA, USA
  • fYear
    2010
  • fDate
    24-26 Aug. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Miniaturization and higher performance needs of the electronic industry continue to drive technology innovations to achieve increased levels of integration. Through Silicon Via technology along with flip chip technology provides significant improvements over the traditional packaging technologies. Vertical stacking of Silicon dies provides a very attractive way of improving functional density of electronics in addition to potentially providing increased electrical performance. Silicon TSV technology along with die stacking on organic substrate is utilized in forming a Silicon Interposer for VLSI packaging. The benefits of high density routing on the Silicon interposer, along with the matching of Silicon CTE provides a reliable packaging technology for next generation VLSI circuits. Very high value capacitors are embedded on the Silicon interposer for low noise decoupling and thus helping to provide a high performance electrical solution.
  • Keywords
    VLSI; capacitors; elemental semiconductors; flip-chip devices; integrated circuit noise; integrated circuit packaging; integrated circuit reliability; network routing; silicon; thermal expansion; three-dimensional integrated circuits; Si; VLSI packaging; embedded capacitors; flip chip technology; high density routing; high value capacitors; low noise decoupling; organic substrate; reliability; silicon CTE; silicon TSV interposers; silicon via technology; thermal expansion; vertical silicon die stacking; Flip chip; Lithography; Packaging; Silicon; Substrates; Through-silicon vias; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan, 2010 IEEE
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-7593-3
  • Type

    conf

  • DOI
    10.1109/CPMTSYMPJ.2010.5679656
  • Filename
    5679656