• DocumentCode
    1926574
  • Title

    Lateral 10-15 V DMOST with very low 6 mohm.mm2 on-resistance

  • Author

    Ludikhuize, Adriaan W.

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    301
  • Lastpage
    304
  • Abstract
    The paper reports a novel low-ohmic 6 mΩ.mm2 LDMOS transistor with breakdown voltage of 15 V, above 10 V full operational voltage and Ron*Qgd (10 Vds)=11 mΩ.nC, integrated in a 0.6 μm BCD IC process and suitable for power DC-DC converters from a 5-10 V supply.
  • Keywords
    BIMOS integrated circuits; DC-DC power convertors; MOSFET; electric resistance; semiconductor device breakdown; 0.6 micron; 10 to 15 V; 5 to 10 V; BCD IC process integration; LDMOS transistor; breakdown voltage; lateral DMOST; on-resistance; operational voltage; power DC-DC converters; Breakdown voltage; DC-DC power converters; Electric breakdown; Epitaxial layers; Implants; Lithography; MOS devices; Rectifiers; Semiconductor optical amplifiers; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
  • Print_ISBN
    0-7803-7318-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2002.1016231
  • Filename
    1016231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1926574