Low phase noise, fully integrated monolithic VCO in X band based on HBT technology

Author

Ouarch, Z. ; Arlot, F. ; Borgarino, M. ; Prigent, M. ; Bary, L. ; Camiade, M.

Author_Institution

UMS, Orsay, France

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1415

Abstract

This paper presents a very low phase noise wide band fully integrated VCO in X band. It is based on UMS HBT technology (HB20P process). This circuit has been realized in the frame of ARGOS project in order to carry out a low phase noise frequency synthesizer. HB20P transistor and varactor nonlinear models have been extracted from pulsed measurements. Furthermore, HBT low frequency noise measurements have been performed to evaluate noise sources and then to optimize the operating point in the design. According to these characterizations, we have realized a fully MMIC VCO providing good phase noise performances (-90 dBc/Hz @ 100 KHz), in a wide frequency band (15%) and in a wide temperature range (-40/spl deg/C\n\n\t\t

Keywords

MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; phase noise; voltage-controlled oscillators; -40 to 65 C; ARGOS project; HB20P transistor; HBT technology; MMIC VCO; X-band; frequency synthesizer; low-frequency noise; nonlinear model; parameter extraction; phase noise; pulsed measurement; varactor; Frequency synthesizers; Heterojunction bipolar transistors; Integrated circuit measurements; Integrated circuit technology; Low-frequency noise; Phase noise; Pulse measurements; Varactors; Voltage-controlled oscillators; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967167

Filename

967167