Title :
Integration of multi-voltage analog and power devices in a 0.25μm CMOS + flash memory process
Author :
De Fresart, Edouard ; De Souza, Richard ; Morrison, Jennifer ; Parris, Patrice ; Heddleson, James ; Venkatesan, Vasudev ; Paulson, Wayne ; Collins, David ; Nivison, Gerald ; Baumert, Beth ; Cowden, William ; Blomberg, Daniel
Author_Institution :
SmartMOS Technol. Center, Motorola DigitalDNA Labs., Mesa, AZ, USA
Abstract :
This paper presents the integration of multivoltage analog and power devices into a 0.25 μm CMOS + flash memory process based on Motorola´s HiPerMOS™ platform. A variety of MOSFETs and BJTs with breakdown voltage ranging from 10 V to more than 40 V, as well as high sheet resistance precision resistors, have been fabricated with the addition of only 3 simple masked implants to the existing process.
Keywords :
CMOS integrated circuits; flash memories; ion implantation; power MOSFET; power bipolar transistors; resistors; semiconductor device breakdown; 0.25 micron; 10 to 40 V; BJT; CMOS/flash memory process; MOSFET; Motorola HiPerMOS platform; breakdown voltage; device integration; masked implants; multi-voltage analog devices; multi-voltage power devices; resistors; sheet resistance; Analog integrated circuits; Breakdown voltage; CMOS process; CMOS technology; Digital integrated circuits; Flash memory; Implants; Laboratories; MOS devices; MOSFETs;
Conference_Titel :
Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on
Print_ISBN :
0-7803-7318-9
DOI :
10.1109/ISPSD.2002.1016232
