Integration of multi-voltage analog and power devices in a 0.25μm CMOS + flash memory process

Author

De Fresart, Edouard ; De Souza, Richard ; Morrison, Jennifer ; Parris, Patrice ; Heddleson, James ; Venkatesan, Vasudev ; Paulson, Wayne ; Collins, David ; Nivison, Gerald ; Baumert, Beth ; Cowden, William ; Blomberg, Daniel

Author_Institution

SmartMOS Technol. Center, Motorola DigitalDNA Labs., Mesa, AZ, USA

fYear

2002

fDate

2002

Firstpage

305

Lastpage

308

Abstract

This paper presents the integration of multivoltage analog and power devices into a 0.25 μm CMOS + flash memory process based on Motorola´s HiPerMOS™ platform. A variety of MOSFETs and BJTs with breakdown voltage ranging from 10 V to more than 40 V, as well as high sheet resistance precision resistors, have been fabricated with the addition of only 3 simple masked implants to the existing process.

Keywords

CMOS integrated circuits; flash memories; ion implantation; power MOSFET; power bipolar transistors; resistors; semiconductor device breakdown; 0.25 micron; 10 to 40 V; BJT; CMOS/flash memory process; MOSFET; Motorola HiPerMOS platform; breakdown voltage; device integration; masked implants; multi-voltage analog devices; multi-voltage power devices; resistors; sheet resistance; Analog integrated circuits; Breakdown voltage; CMOS process; CMOS technology; Digital integrated circuits; Flash memory; Implants; Laboratories; MOS devices; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016232

Filename

1016232