Title :
Preparation of ferroelectric capacitor films onto the releasable substrate and its application to nano-transfer method
Author :
Ichiki, Masaaki ; Iimura, Keita ; Hosono, Toshifumi ; Kuroki, Keisuke ; Tomioka, Fumiaki ; Suga, Tadatomo ; Maeda, Ryutaro ; Itoh, Toshihiro
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
High dielectric capacitor, that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture. The proposal of the structure of electrode using Ti is shown in case of the stress film.
Keywords :
ferroelectric capacitors; lead compounds; nanotechnology; permittivity; titanium compounds; zirconium compounds; PZT; Si; clear columnar texture; dielectric constant; electrode structure; ferroelectric capacitor film preparation; high dielectric capacitor; nanotransfer method; nonheat-resisting substrates; perovskite structure; releasable substrate; stress film; Capacitors; Dielectric constant; Electrodes; Films; Polymers; Silicon; Substrates;
Conference_Titel :
CPMT Symposium Japan, 2010 IEEE
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-7593-3
DOI :
10.1109/CPMTSYMPJ.2010.5679658
