DocumentCode
1926619
Title
Solid-state high power RF oscillator
Author
Gitsevich, A. ; Kirkpatrick, D. ; Dymond, L., Jr.
Author_Institution
Fusion Lighting Inc., Rockville, MD, USA
Volume
3
fYear
2001
fDate
20-24 May 2001
Firstpage
1423
Abstract
A new kind of RF solid-state oscillator design is observed. The oscillator has two feedback loops, which provide a safe working condition for the power transistor at high levels of RF output power. The oscillator uses a high power LDMOS transistor, which provides output power greater than 65 W and efficiency better than 65% at the operating frequency of 915 MHz. The oscillator is designed using microstrip lines and lumped components on Rogers R03010/sup TM/ substrate.
Keywords
MOSFET circuits; UHF field effect transistors; UHF oscillators; feedback oscillators; power MOSFET; 65 W; 65 percent; 915 MHz; Rogers R03010 substrate; feedback loop; lumped component; microstrip line; power LDMOS transistor; solid-state high-power RF oscillator; Feedback loop; Impedance matching; Microwave oscillators; Microwave transistors; Power amplifiers; Power generation; Power transistors; Radio frequency; Solid state circuits; Solid state lighting;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967169
Filename
967169
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