Title :
Metal (CoSi2)/Insulator (CaF2) Hot Elelectron Transistor using Electron-Beam Lithography on Si Substrate
Author :
Saitoh, W. ; Suemasu, T. ; Kohno, Y. ; Watanabe, M. ; Asada, M.
Author_Institution :
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, JAPAN. phone: +81-3-5734-2564, fax: +81-3-5734-2907
Abstract :
We fabricated small-area metal(CoSi2)/insulator(CaF2) hot electron transistor using electron-beam lithography. The transistor is composed of a CoSi2/CaF2 (1.9 nm)/CoSi2 (1.9 nm) tunnel emitter and a CaF2 (5 nm) collector barrier on n-Si(111) substrate. The emitter mesa area is 0.9×0.9 ¿m2. Although the measured characteristics shows clear transistor action, collector current increases without sturation because of leakage current through SiO2 film under the outside electrode pads. The characteristics removed the leakage current exhibited the saturation, and current gain ß≫36 was obtained at 77K.
Keywords :
Current measurement; Dielectrics and electrical insulation; Electrodes; Electrons; Epitaxial growth; Leakage current; Lithography; Metal-insulator structures; Metallic superlattices; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
