High-power AlGaN/GaN FET-based VCO sources

Author

Shealy, J.B. ; Smart, J.A. ; Shealy, J.R.

Author_Institution

RF Nitro Commun. Inc., Charlotte, NC, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1427

Abstract

The first report of multi-watt AlGaN/GaN FET-based voltage-controlled oscillators (VCO´s) with high efficiency is presented. Varactor-tuned oscillators implemented using distributed networks oscillate at 3 GHz with high output power (2.7 w), high efficiency (27%), high supply voltage range (3.5 V to 30 V) and high tuning bandwidth (13%) over a control voltage range from 1 to 9 V. The measured output power and circuit efficiency are examined as a function of supply voltage. These results indicate high-power AlGaN/GaN-based VCO´s may he used as high-efficiency sources for radio communications.

Keywords

III-V semiconductors; aluminium compounds; circuit tuning; field effect transistor circuits; gallium arsenide; microwave oscillators; voltage-controlled oscillators; wide band gap semiconductors; 1 to 9 V; 2.7 W; 27 percent; 3 GHz; 3.5 to 30 V; AlGaN-GaN; AlGaN/GaN FET VCO; circuit efficiency; distributed network; high-power source; output power; radio communication; varactor-tuned oscillator; Aluminum gallium nitride; Bandwidth; Circuit optimization; Communication system control; Gallium nitride; Power generation; Power measurement; Radio communication; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967170

Filename

967170