DocumentCode :
1926715
Title :
High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy
Author :
Dodabalapur, A. ; Chang, T.Y.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Absorption; Current measurement; Electric variables measurement; Gain measurement; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Photoconductivity; Phototransistors; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664697
Filename :
664697
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1926715
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