• DocumentCode
    1926715
  • Title

    High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy

  • Author

    Dodabalapur, A. ; Chang, T.Y.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, NJ
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Absorption; Current measurement; Electric variables measurement; Gain measurement; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Photoconductivity; Phototransistors; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664697
  • Filename
    664697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1926715