DocumentCode
1926742
Title
Modeling the inversion charge centroid in Tri-Gate MOSFETs including quantum effects
Author
Vimala, P. ; Balamurugan, N.B.
Author_Institution
Thiagarajar Coll. of Eng., Madurai, India
fYear
2013
fDate
7-9 Jan. 2013
Firstpage
1
Lastpage
4
Abstract
In this paper, inversion charge centroid analytical model for Tri-Gate (TG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To obtain the QM effects of TG MOSFETs, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid.
Keywords
MOSFET; Poisson equation; Schrodinger equation; ICDF; QM effects; TG metal-oxide-semiconductor field effect transistors; coupled Poisson-Schrodinger equations; inversion charge centroid analytical model; inversion charge distribution function; quantum effects; trigate MOSFET; variational approach; Semiconductor device modeling; TV; Centroid; Quantum effects; Surrounding Gate; Variational approach;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT), 2013 International Conference on
Conference_Location
Tiruvannamalai
Print_ISBN
978-1-4673-5300-7
Type
conf
DOI
10.1109/ICEVENT.2013.6496577
Filename
6496577
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