Title :
Modeling the inversion charge centroid in Tri-Gate MOSFETs including quantum effects
Author :
Vimala, P. ; Balamurugan, N.B.
Author_Institution :
Thiagarajar Coll. of Eng., Madurai, India
Abstract :
In this paper, inversion charge centroid analytical model for Tri-Gate (TG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To obtain the QM effects of TG MOSFETs, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; ICDF; QM effects; TG metal-oxide-semiconductor field effect transistors; coupled Poisson-Schrodinger equations; inversion charge centroid analytical model; inversion charge distribution function; quantum effects; trigate MOSFET; variational approach; Semiconductor device modeling; TV; Centroid; Quantum effects; Surrounding Gate; Variational approach;
Conference_Titel :
Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT), 2013 International Conference on
Conference_Location :
Tiruvannamalai
Print_ISBN :
978-1-4673-5300-7
DOI :
10.1109/ICEVENT.2013.6496577
