Title :
Parameter extraction of single electron transistor based on Master Equation approach
Author :
Sheela, L. ; Sudha, S. ; Balamurugan, N.B.
Author_Institution :
Regional Centre of Anna Univ., Tirunelveli, India
Abstract :
In this paper, single electron transistor is modeled using Master Equation (ME) approach. In our scheme the steady state Master Equation was expressed, in which the resultant value is necessary for the current calculation. A ME for the probability distribution of electrons in the SET dot is obtained from the stoachastic process, allowing the calculation of device characteristics. Helmholtz´s free energy is considered to determine the transport of electrons through a SET device. Work done by voltage source and free energy change is calculated to get improved IV characteristics of SET.
Keywords :
free energy; master equation; probability; semiconductor device models; single electron transistors; Helmholtz free energy; ME approach; SET IV characteristics; SET device; SET dot; device characteristics; electron probability distribution; electron transport; free energy change; master equation approach; parameter extraction; single-electron transistor modeling; steady state master equation; stoachastic process; voltage source; Educational institutions; Electric potential; Shape; Transistors; Device modeling; Single-electron transistor; coulomb blockade; master equation; quantum dot; tunneling rate;
Conference_Titel :
Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT), 2013 International Conference on
Conference_Location :
Tiruvannamalai
Print_ISBN :
978-1-4673-5300-7
DOI :
10.1109/ICEVENT.2013.6496581
