Measurement of interstrip and coupling capacitances of silicon microstrip detectors

Author

Barberis, E. ; Cartiglia, N. ; Hutchinson, D. ; Leslie, J. ; LeVier, C. ; Rahn, J. ; Rowe, W. ; Sadrozinski, H.F.-W. ; Yamamoto, K. ; Yamamura, K. ; Ohsugi, T. ; Unno, Y. ; Aso, T. ; Miyata, H. ; Tamura, N.

Author_Institution

Santa Cruz Inst. for Particle Phys., California Univ., CA, USA

fYear

1992

fDate

25-31 Oct 1992

Firstpage

198

Abstract

The authors present a set of measurements of the capacitances on silicon microstrip detectors which are important for the operation of the detectors. Various strip widths on both the junction and the ohmic side and widths of blocking p+ implant on the ohmic side have been implemented on test detectors. The interstrip, body, and coupling capacitances of the strips were frequency dependent. SPICE was used to simulate the resistive and capacitive network represented by the detectors, and good agreement between measurement and simulation was found. The detectors were irradiated with ionizing radiation to test the radiation hardness of the design. The noise increase induced in a fast low-noise amplifier due to the capacitive load of different strip geometries was measured. The results agree with those obtained using discrete external capacitors

Keywords

capacitance measurement; position sensitive particle detectors; radiation hardening (electronics); semiconductor counters; semiconductor device noise; SPICE; Si microstrip detector; coupling capacitances; interstrip capacitance; noise; radiation hardness; Capacitance measurement; Detectors; Frequency dependence; Implants; Ionizing radiation; Microstrip; SPICE; Silicon; Strips; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301193

Filename

301193