Title :
A real-time thermal model for monitoring of power semiconductor devices
Author :
Gachovska, Tanya Kirilova ; Bo Tian ; Hudgins, Jerry ; Wei Qiao ; Donlon, John
Author_Institution :
Electr. Eng. Dept., Univ. of Nebraska - Lincoln, Lincoln, NE, USA
Abstract :
A RC thermal network with temperature dependent thermal conductivities and heat capacitances is used to calculate the junction temperature of IGBT in a device model realized in Simulink. The collector current, IC, collector-emitter voltage, VCE, and the case temperature, TC, measured during the cycling, are used as input parameters of the Simulink model. The model is compared with a constant thermal conductivity and heat capacitance model (RC network) and verified experimentally using a thermo-sensitive electrical parameter method. Including the temperature dependent parameters results in an improvement of accuracy for determining the junction temperature compare to the model with constant thermal conductivity and heat capacitance.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; thermal conductivity; IGBT junction temperature; RC thermal network; Simulink model; and heat capacitance model; case temperature; collector-emitter voltage; constant thermal conductivity; power semiconductor device monitoring; real-time thermal model; temperature dependent thermal conductivity; thermosensitive electrical parameter method; Conductivity; Heating; Insulated gate bipolar transistors; Junctions; Temperature measurement; Thermal conductivity; Voltage measurement;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6646980
