Title :
Prototype double-sided silicon sensor (DSSS) for SDC detector
Author :
Ohsugi, T. ; Iwata, Y. ; Ohyama, H. ; Okada, M. ; Ohmoto, T. ; Unno, Y. ; Kohriki, T. ; Tamura, N. ; Miyata, H. ; Higuchi, M. ; Niwa, K. ; Nakamura, M. ; Nagashima, Y. ; Daigo, M. ; Murakami, A. ; Kobayashi, S. ; Yamamoto, K. ; Yamamura, K. ; Muramaatsu,
Author_Institution :
Dept. of Phys., Hiroshima Univ., Japan
Abstract :
A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p+ channel between n+ strips. The readout capacitance was minimized by making a narrow strip on the p+ side and by inserting a wide isolation p+ channel in the n+ strip side. The capacitance is measured to be 0.8 pF/cm on the p+ strip side and 1.13 pF/cm on the n+ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width
Keywords :
capacitance; semiconductor counters; 150 V; AC coupling sensor; Al strip; SDC detector; Si detector; bias feeding resistor; double-sided; junction edge breakdown voltage; ohmic-contact; readout capacitance; resistance; Capacitance; Leakage current; Physics; Prototypes; Radiation detectors; Signal resolution; Silicon radiation detectors; Spread spectrum communication; Strips; Voltage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301201
