DocumentCode
1927067
Title
Experimental characterization of hydrogenated amorphous silicon photonic crystal waveguides
Author
Carletti, L. ; Grillet, C. ; Orobtchouk, R. ; Benyattou, T. ; Rojo-Romeo, P. ; Letartre, Xavier ; Fedeli, J.M. ; Monat, Christelle
Author_Institution
Inst. des Nanotechnol. de Lyon (INL), Univ. de Lyon, Ecully, France
fYear
2013
fDate
12-16 May 2013
Firstpage
1
Lastpage
1
Abstract
Summary form only given. Photonic crystal (PhC) slab waveguides are very compact structures that are able to tightly confine light. This property makes them fundamental in the conception of highly integrated photonic devices. In our work we report the first experimental results, to our knowledge, of PhC waveguides fabricated using the hydrogenated amorphous silicon (a-Si:H) platform. From recent investigations, a-Si:H has emerged as a possible new material platform for nonlinear photonics [1-4]. The associated fabrication process can be fully CMOS compatible. Furthermore, a-Si:H can exhibit both high nonlinear Kerr index (n2) and low two-photon absorption (βTPA) at telecom wavelengths. Its nonlinear figure of merit (FOM=n2/ (βTPA*λ)) can be as high as 5 [4], which is critical for creating efficient nonlinear photonic devices. In comparison, crystalline silicon (c-Si) exhibit a high Kerr coefficient but its poor FOM (~0.3-0.5) prevents it from being used in some applications.
Keywords
amorphous state; nonlinear optics; optical Kerr effect; optical fabrication; optical waveguides; photonic crystals; silicon compounds; two-photon processes; CMOS compatibility; SiO2; efficient nonlinear photonic devices; highly integrated photonic devices; hydrogenated amorphous silicon photonic crystal waveguide fabrication; nonlinear Kerr index; nonlinear photonics; telecom wavelengths; two-photon absorption; Amorphous silicon; Lattices; Optical waveguides; Optimized production technology; Photonic crystals; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location
Munich
Print_ISBN
978-1-4799-0593-5
Type
conf
DOI
10.1109/CLEOE-IQEC.2013.6801406
Filename
6801406
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