Author :
Bosisio, L. ; Focardi, E. ; Forti, F. ; Kashigin, S. ; Dierickx, B. ; Wouters, D. ; Willems, G. ; Winderickx, G. ; Debusschere, I. ; Simoen, E. ; Claeys, C. ; Maes, H. ; Hermans, L. ; Heijne, E.H.M. ; Jarron, P. ; Campbell, M. ; Anghinolfi, F. ; Aspell, P
Abstract :
A novel approach to monolithic pixel detectors based on SOI (silicon-on-insulator) wafers with high-resistivity substrates is being pursued by the CERN RD-19 collaboration. The authors report the results of electrical evaluation measurements performed on the devices fabricated in the substrate. The SOI preparation processes considered (SIMOX and laser or stripheater ZMR) appear to be compatible with the fabrication of detectors of suitable quality in the high-resistivity substrate. With reference to the detecting elements in the substrate, ZMR wafers give very good results. For SIMOX wafers, the main concern seems to be the higher depletion voltage resulting from the increase in effective doping concentration
Keywords :
SIMOX; semiconductor counters; semiconductor doping; semiconductor technology; SIMOX; ZMR wafers; depletion voltage; doping concentration; high resistivity SOI wafers; monolithic pixel detectors; preparation; silicon-on-insulator; Collaboration; Conductivity; Detectors; Diodes; Electric variables measurement; Optical device fabrication; Performance evaluation; Silicon on insulator technology; Testing; Voltage;
