Detector diodes and test devices fabricated in high resistivity SOI wafers

Author

Bosisio, L. ; Focardi, E. ; Forti, F. ; Kashigin, S. ; Dierickx, B. ; Wouters, D. ; Willems, G. ; Winderickx, G. ; Debusschere, I. ; Simoen, E. ; Claeys, C. ; Maes, H. ; Hermans, L. ; Heijne, E.H.M. ; Jarron, P. ; Campbell, M. ; Anghinolfi, F. ; Aspell, P

Author_Institution

INFN, Pisa, Italy

fYear

1992

fDate

25-31 Oct 1992

Firstpage

230

Abstract

A novel approach to monolithic pixel detectors based on SOI (silicon-on-insulator) wafers with high-resistivity substrates is being pursued by the CERN RD-19 collaboration. The authors report the results of electrical evaluation measurements performed on the devices fabricated in the substrate. The SOI preparation processes considered (SIMOX and laser or stripheater ZMR) appear to be compatible with the fabrication of detectors of suitable quality in the high-resistivity substrate. With reference to the detecting elements in the substrate, ZMR wafers give very good results. For SIMOX wafers, the main concern seems to be the higher depletion voltage resulting from the increase in effective doping concentration

Keywords

SIMOX; semiconductor counters; semiconductor doping; semiconductor technology; SIMOX; ZMR wafers; depletion voltage; doping concentration; high resistivity SOI wafers; monolithic pixel detectors; preparation; silicon-on-insulator; Collaboration; Conductivity; Detectors; Diodes; Electric variables measurement; Optical device fabrication; Performance evaluation; Silicon on insulator technology; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301206

Filename

301206