Title :
Free ion yields for tetramethylsilane and tetramethylgermanium
Author :
Sakamoto, M. ; Iso, H. ; Oyama, K. ; Higuchi, M. ; Hoshi, Y. ; Yuta, H. ; Abe, K. ; Hasegawa, K. ; Suekane, F. ; Kawamura, N. ; Neichi, K. ; Suzuki, K. ; Masuda, K. ; Kikuchi, R. ; Miyano, K.
Author_Institution :
Dept. of Eng., Tohoku Gakuin Univ., Tagajo, Japan
Abstract :
The free ion yields from 207Bi conversion electrons were measured as a function of applied electric field using ionization chambers filled with tetramethylsilane (TMS) and tetramethylgermanium (TMG). The distributions for thermalization lengths of electrons were calculated by using Gaussian and exponential forms. The total free ion yields considering the impurity effect in liquid, and the thermalization lengths of electrons in TMS and TMG were determined to be 3.35±0.49, 3.42±0.56 and 165±18 Å, 185±24 Å, respectively
Keywords :
ionisation chambers; 165 Å; 3.35 Å; 3.42 Å; TMG; TMS; electron thermalization lengths; free ion yields; ionization chambers; tetramethylgermanium; tetramethylsilane; Dielectric constant; Educational institutions; Electric variables measurement; Electrons; Impurities; Ionization chambers; Physics; Probability; Spontaneous emission; Temperature distribution;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0884-0
DOI :
10.1109/NSSMIC.1992.301214
