Title :
Coplanar and microstrip oscillators in SiGe SIMMWIC technology
Author :
Strohm, K.M. ; Rheinfelder, C.N. ; Luy, J.-F. ; Nuechter, P. ; Hess, T. ; Heinrich, W. ; Kuhnert, H. ; Nadarassin, M. ; Warns, C. ; Menzel, W.
Author_Institution :
DaimlerChrysler Res. Center, Ulm, Germany
Abstract :
Oscillators in SiGe SIMMWIC HBT technology have been realized in coplanar and a newly developed microstrip environment. Coplanar 24 GHz LC oscillators show 8.7 dBm output power and a phase noise of -99 dBc/Hz @ 100 kHz offset. Coplanar 27 GHz VCO´s yield 12.5 dBm output power and a tuning range of 1.28 GHz. Microstrip 27 GHz VCO´s show 5 dBm output power and a phase noise better than -90 dBc/Hz @ 100 kHz offset.
Keywords :
Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; microstrip circuits; millimetre wave oscillators; semiconductor materials; voltage-controlled oscillators; 24 GHz; 27 GHz; LC oscillator; SiGe; SiGe SIMMWIC HBT technology; VCO; coplanar oscillator; microstrip oscillator; output power; phase noise; tuning range; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Millimeter wave technology; Phase noise; Power generation; Silicon germanium; Space technology; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967201
