Thermal analysis of deep sub-micron PD SOI MOSFET with asymmetric source and drain

Focusing on the influence of self-heating effect on electrical properties of the SOI device, thermal analysis of the partially depleted (PD) SOI MOSFET with asymmetric source and drain is performed, and temperature distribution and electrostatic potential distribution of the device are simulated with TCAD tools. The results show that: the heat source of the device is the regions with the highest electrostatic potential; the lattice temperature of the device rises with the shrinking of channel length and silicon film thickness, and the former has more influence. PD SOI MOSFET with asymmetric source and drain is better in reducing self-heating effect than the other SOI devices.