Graphene, plasmonic and silicon optical modulators

Author

Sorger, Volker J. ; Ren-Min Ma ; Chen Huang ; Zhuoran Li ; Ming Liu ; Xiang Zhang

Author_Institution

Dept. of Electr. & Comput. Eng., George Washington Univ., Washington, DC, USA

fYear

2013

fDate

12-16 May 2013

Firstpage

1

Lastpage

1

Abstract

In this work we showcase two novel examples of electro-optic modulators (EOM) for ultrafast and low-power future transmitters. Unlike weak-interacting EOM design, which often require high feedback in form of high-Q cavity design we deploy novel materials and metal-based approaches. Both devices are based on novel materials, namely Graphene [1] and Indium-Tin-Oxide (ITO) [2], and feature the Silicon-on-Insulator (SOI) platform facilitating ease in monolithic integration (Fig 1).

Keywords

electro-optical modulation; elemental semiconductors; graphene; indium compounds; integrated optics; optical design techniques; plasmonics; silicon; silicon-on-insulator; C; ITO; SOI platform; Si; electro-optic modulators; graphene optical modulators; high-Q cavity design; indium-tin-oxide platform; metal-based approaches; monolithic integration; plasmonic optical modulators; silicon optical modulators; silicon-on-insulator platform; ultrafast transmitters; Graphene; High-speed optical techniques; Optical feedback; Optical modulation; Optical refraction; Optical transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference

Conference_Location

Munich

Print_ISBN

978-1-4799-0593-5

Type

conf

DOI

10.1109/CLEOE-IQEC.2013.6801422

Filename

6801422