• DocumentCode
    1927587
  • Title

    Characterisation of Advanced LOCOS Isolation

  • Author

    Bazley, D.J. ; Jones, S.K. ; Beanland, R. ; Scaife, B.

  • Author_Institution
    GEC-Marconi Materials Technology Ltd, Caswell, Towcester, Northants NN12 8EQ, UK
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    623
  • Lastpage
    626
  • Abstract
    This paper presents 2D and 3D TEM characterisation of advanced LOCOS isolation to assess active area encroachment and nitride lifting dependence on mask line/space geometry and at active area corners. Standard and optimised LOCOS oxidation conditions are compared.
  • Keywords
    CMOS process; Geometry; Kinetic theory; Materials science and technology; Oxidation; Predictive models; Space technology; Temperature; Thermal stresses; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1927587