Title :
Characterisation of Advanced LOCOS Isolation
Author :
Bazley, D.J. ; Jones, S.K. ; Beanland, R. ; Scaife, B.
Author_Institution :
GEC-Marconi Materials Technology Ltd, Caswell, Towcester, Northants NN12 8EQ, UK
Abstract :
This paper presents 2D and 3D TEM characterisation of advanced LOCOS isolation to assess active area encroachment and nitride lifting dependence on mask line/space geometry and at active area corners. Standard and optimised LOCOS oxidation conditions are compared.
Keywords :
CMOS process; Geometry; Kinetic theory; Materials science and technology; Oxidation; Predictive models; Space technology; Temperature; Thermal stresses; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
