• DocumentCode
    1927902
  • Title

    200, 400 and 800 GHz Schottky diode "substrateless" multipliers: design and results

  • Author

    Schlecht, E. ; Chattopadhyay, G. ; Maestrini, A. ; Fung, A. ; Martin, S. ; Pukala, D. ; Bruston, J. ; Mehdi, I.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    3
  • fYear
    2001
  • fDate
    20-24 May 2001
  • Firstpage
    1649
  • Abstract
    Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology. To reduce the RF losses in the passive circuitry, the substrate under the transmission lines is etched away, leaving the metal suspended in air held by its edges on a GaAs frame. This allows the circuit to be handled and mounted easily, and makes it very robust. To demonstrate this technology, broadband balanced planar doublers have been built and tested at 400 GHz. The next generation 200, 400 and 800 GHz doublers with improved performance are also discussed. The 368-424 GHz circuits were measured and achieved 20% efficiency at 387 GHz. The 3 dB bandwidth of the fix-tuned doubler is around 9%. The maximum output power measured is around 8 mW and drops down to 1 mW at 417 GHz. This represents the highest frequency waveguide based planar doubler to date in the literature.
  • Keywords
    Schottky diodes; etching; frequency multipliers; gallium arsenide; submillimetre wave diodes; submillimetre wave integrated circuits; 1 to 8 mW; 20 percent; 200 to 800 GHz; GaAs; GaAs frame; RF losses reduction; Schottky diode multipliers; broadband balanced planar doublers; fabrication technology; fix-tuned doubler; passive circuitry; submillimeter doubler circuits; substrateless multipliers; suspended transmission lines; waveguide based planar doubler; Distributed parameter circuits; Etching; Fabrication; Gallium arsenide; Planar transmission lines; Power transmission lines; Propagation losses; Radio frequency; Robustness; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2001 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-6538-0
  • Type

    conf

  • DOI
    10.1109/MWSYM.2001.967221
  • Filename
    967221