Title :
200, 400 and 800 GHz Schottky diode "substrateless" multipliers: design and results
Author :
Schlecht, E. ; Chattopadhyay, G. ; Maestrini, A. ; Fung, A. ; Martin, S. ; Pukala, D. ; Bruston, J. ; Mehdi, I.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Several sub-millimeter doubler circuits have been designed and built using a new fabrication technology. To reduce the RF losses in the passive circuitry, the substrate under the transmission lines is etched away, leaving the metal suspended in air held by its edges on a GaAs frame. This allows the circuit to be handled and mounted easily, and makes it very robust. To demonstrate this technology, broadband balanced planar doublers have been built and tested at 400 GHz. The next generation 200, 400 and 800 GHz doublers with improved performance are also discussed. The 368-424 GHz circuits were measured and achieved 20% efficiency at 387 GHz. The 3 dB bandwidth of the fix-tuned doubler is around 9%. The maximum output power measured is around 8 mW and drops down to 1 mW at 417 GHz. This represents the highest frequency waveguide based planar doubler to date in the literature.
Keywords :
Schottky diodes; etching; frequency multipliers; gallium arsenide; submillimetre wave diodes; submillimetre wave integrated circuits; 1 to 8 mW; 20 percent; 200 to 800 GHz; GaAs; GaAs frame; RF losses reduction; Schottky diode multipliers; broadband balanced planar doublers; fabrication technology; fix-tuned doubler; passive circuitry; submillimeter doubler circuits; substrateless multipliers; suspended transmission lines; waveguide based planar doubler; Distributed parameter circuits; Etching; Fabrication; Gallium arsenide; Planar transmission lines; Power transmission lines; Propagation losses; Radio frequency; Robustness; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967221