Title :
Combining slow-light and carrier induced nonlinearities in photonic crystal nanocavities
Author :
Bencheikh, Kamel ; Yacomotti, Alejandro ; Grinberg, Patricio ; Sagnes, I. ; Raineri, Fabrice ; Dumeige, Yannick ; Levenson, Ariel
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
Abstract :
Summary form only given. We implement coherent population oscillation and carrier-induced nonlinear refractive index in a semiconductor active nanocavity to strongly increase the photonic lifetime and manipulate its optical response.The so-called photonic crystal L3 cavity, given by three missing holes in a 2D photonic crystal (2D-PhC), is an emblematic illustration of a nanocavity with strong light confinement due to high-Q resonance and small mode volume [1]. Strong electronic confinement can also be achieved provided the cavity contains active semiconductor nanostructures such as quantum wells (QWs) or dots. These two effects lead to the enhancement of the light-matter interaction and, potentially, to a modification of photonic, electronic and thermal characteristic times. Thus, semiconductor 2D-PhC L3 nanocavities are excellent candidates for the implementation of advanced nonlinear photonic interactions. In this work we study the combined effects of both coherent population oscillation (CPO) and carrier-induced nonlinear dephasing in the photon lifetime of a L3 cavity incorporating 4 InGaAsP/InGaAs QWs. The CPO induces a decrease of the group velocity through a strong dispersion of the refractive index (i.e. slow light effect) while the nonlinear phase shift, if implemented close to the bistability threshold, ends up with a strong slowing down of the optical response. The resulting cavity lifetime strongly depends on the control parameters. It is then possible to actively control the photon lifetime of the nanocavity, to enhance its quality factor, to achieve differential amplification under the slow-light regime and to benefit from frequency pulling During this presentation we will discuss theoretically [1] all these aspects with respect to the role of CPO and dynamical nonlinear responses. We will further present recent experimental results [2] demonstrating the enhancement by two orders of magnitude of the cavity lifetime together with the frequency pulling- effect.Γ
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; indium compounds; light coherence; nanophotonics; optical bistability; optical dispersion; optical phase shifters; photonic crystals; quantum optics; refractive index; semiconductor quantum wells; slow light; InGaAsP-InGaAs; bistability threshold; carrier-induced nonlinear dephasing effects; carrier-induced nonlinear refractive index; coherent population oscillation effects; electronic confinement; frequency pulling effect; group velocity; indium gallium arsenide phosphide-indium gallium arsenide quantum wells; light confinement; light-matter interaction enhancement; nonlinear phase shift; nonlinear photonic interactions; optical dispersion; optical response manipulation; photon lifetime; quality factor enhancement; quantum dots; semiconductor 2D photonic crystal L3 nanocavities; slow light effect; Cavity resonators; Oscillators; Photonic crystals; Photonics; Refractive index; Sociology; Statistics;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6801447