Title :
Benefits of SiGe over silicon bipolar technology for broadband mixers with bandwidth above 10 GHz
Author :
Hackl, S. ; Wurzer, M. ; Bock, J. ; Meister, T.F. ; Knapp, H. ; Aufinger, K. ; Boguth, S. ; Treitinger, L. ; Scholtz, A.L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
Future broadband wireless services will use carrier frequencies in the range of 10 GHz to 40 GHz. This raises the question which semiconductor technologies are suited for realization of the key RF building blocks like LNAs, mixers, oscillators and, in a later phase, for the complete monolithic integration of receivers and transmitters. This work investigates the benefits of SiGe bipolar technology in comparison to silicon at identical feature size for broadband mixers with bandwidth in the range mentioned above.
Keywords :
Ge-Si alloys; bipolar transistors; microwave bipolar transistors; microwave mixers; semiconductor materials; 10 GHz; 10 to 40 GHz; RF front-end; Si; SiGe; bandwidth; broadband mixer; semiconductor bipolar technology; wireless communication; Bandwidth; Circuit noise; Cutoff frequency; Delay; Germanium silicon alloys; Manufacturing; Paper technology; Radio frequency; Radio transmitters; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967231
