Title :
40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs
Author :
Masuda, T. ; Ohhata, K. ; Shiramizu, N. ; Ohue, E. ; Oda, K. ; Hayami, R. ; Shimamoto, H. ; Kondo, M. ; Harada, T. ; Washio, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A 4:1 multiplexer and a 1:4 demultiplexer IC module were developed by using 0.2 /spl mu/m self-aligned selective-epitaxial-growth SiGe HBTs. For the data retiming, the multiplexer and the demultiplexer include a frequency divider that operates at over 40 GHz. 50-Gb/s operation for the multiplexer and 48-Gb/s operation for the demultiplexer were observed by measurements using on-wafer probes. We concluded that these modules, which mounted the IC on a ceramic substrate with a brass block, are applicable to transmitter and receiver functions of a 40-Gb/s optical transmission system.
Keywords :
Ge-Si alloys; SONET; bipolar MMIC; demultiplexing equipment; frequency dividers; heterojunction bipolar transistors; multiplexing equipment; optical receivers; optical transmitters; semiconductor materials; 0.2 micron; 1:4 demultiplexer; 40 Gbit/s; 4:1 multiplexer; HBTs; IC module; SiGe; data retiming; frequency divider; on-wafer probes; optical transmission system; receiver functions; self-aligned selective-epitaxial-growth; transmitter functions; Clocks; Fixtures; Germanium silicon alloys; Heterojunction bipolar transistors; High speed optical techniques; Multiplexing; Optical receivers; Optical transmitters; Silicon germanium; Testing;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967232
