Low-frequency noise and phase noise behavior of advanced SiGe HBTs

Author

Bary, L. ; Cibiel, G. ; Ibarra, J. ; Llopis, O. ; Plana, R. ; Graffeuil, J. ; Niu, G. ; Cressler, J.D. ; Jin, Z. ; Zhang, S. ; Joseph, A.J.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1705

Abstract

This paper addresses low frequency noise and residual phase noise in advanced SiGe HBTs featuring different Ge profile shape. Under certain bias conditions, increasing the Ge content decreases the base current fluctuations and hence improves the residual phase noise performance. Additional low frequency noise and phase noise measurements have provided a better insight into the physical location of the 1/f noise sources in these devices.

Keywords

1/f noise; Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; microwave bipolar transistors; phase noise; semiconductor device noise; semiconductor materials; 1/f noise sources; Ge profile shape; HBTs; SiGe; UHF bipolar transistors; base current fluctuations; bias conditions; low-frequency noise; microwave transistors; physical location; residual phase noise; Fluctuations; Frequency measurement; Germanium silicon alloys; Low-frequency noise; Noise measurement; Noise shaping; Phase measurement; Phase noise; Shape; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967234

Filename

967234