Title :
SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology
Author :
Liang-Hung Lu ; Mohammadi, S. ; Zhenqiang Ma ; Ponchak, G.E. ; Alterovitz, S.A. ; Strohm, K.M. ; Luy, J.-F. ; Bhattacharya, P. ; Katehi, L.P.B.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
Multi-finger SiGe HBT´s have been fabricated using a novel fully self-aligned double-mesa technology. With the advanced process technology, a maximum oscillating frequency (f/sub max/) of 78 GHz and a cut-off frequency (f/sub T/) of 37 GHz were demonstrated for a common-emitter device with emitter area of 2/spl times/2/spl times/30 /spl mu/m/sup 2/. For class-A operations, 10-finger devices (A/sub E/=2/spl times/2/spl times/30 /spl mu/m/sup 2/) exhibit an output power of 24.13 dBm with a maximum power added efficiency (PAE) of 26.9% at 8.5 GHz.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor materials; 2 micron; 26.9 percent; 30 micron; 37 GHz; 78 GHz; 8.5 GHz; SiGe; class-A operations; common-emitter device; cut-off frequency; emitter area; fully self-aligned double mesa technology; maximum oscillating frequency; multi-finger HBTs; power added efficiency; power heterojunction bipolar transistors; Cutoff frequency; Etching; Fabrication; Fingers; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; Microwave devices; Silicon germanium; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967235
