Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si

Author

Ponchak, G.E. ; Tentzeris, E.M. ; Papapolymerou, J.

Author_Institution

NASA Glenn Res. Center, Cleveland, OH, USA

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1723

Abstract

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si-SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.

Keywords

MIMIC; MMIC; electromagnetic coupling; electromagnetic shielding; finite difference time-domain analysis; microstrip lines; polymer films; silicon; 3D monolithic ICs; CMOS Si wafers; FDTD analysis; Si; Si-SiGe; Si/SiGe MIMICs; Si/SiGe MMICs; circuit performance degradation; coupling reduction; embedded microstrip lines; low resistivity Si wafers; monolithic MM-wave ICs; monolithic microwave integrated circuits; multiple layers; polyimide layer embedded lines; shielding structures; three-dimensional circuits; transmission lines; Circuit optimization; Conductivity; Coupling circuits; Degradation; Distributed parameter circuits; Finite difference methods; Microstrip; Millimeter wave integrated circuits; Polyimides; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967238

Filename

967238