Design considerations of CMOS VLSI for KEK B-factory silicon microvertex detector

Author

Ikeda, Hirokazu ; Fujita, Yoichi ; Ikeda, Mitsuo ; Inaba, Susumu ; Okuno, Soji ; Tanaka, Manobu ; Tsuboyama, Toru

Author_Institution

KEK, Ibaraki, Japan

fYear

1992

fDate

25-31 Oct 1992

Firstpage

393

Abstract

Design studies on a front-end CMOS amplifier for a silicon strip detector of the KEK B-factory experiment are described in terms of circuit characterization, and prototype fabrication and evaluation. Extrapolating the prototype performance to the B-factory design, the authors estimated the equivalent noise charge of 1000 electrons at 20 pF with an nMOS input FET. A pipeline analog memory, a built-in gain stage, and a flip-chip assembly were key elements of the design

Keywords

CMOS integrated circuits; amplifiers; nuclear electronics; position sensitive particle detectors; semiconductor counters; silicon; 20 pF; CMOS VLSI; KEK B-factory; Si; built-in gain stage; circuit characterization; equivalent noise charge; flip-chip assembly; front-end CMOS amplifier; microvertex detector; nMOS input FET; pipeline analog memory; prototype fabrication; prototype performance; strip detector; Circuit noise; Detectors; Electrons; FETs; Fabrication; MOS devices; Prototypes; Silicon; Strips; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301267

Filename

301267