Improvements in dynamic and 1/f noise performances of GaAs MESFETS at cryogenic temperatures by using a monolithic process

Author

Camin, D.V. ; Pessina, G. ; Previtali, E.

Author_Institution

Dipartimento di Fisica, Milano Univ., Italy

fYear

1992

fDate

25-31 Oct 1992

Firstpage

418

Abstract

A monolithic array of MESFETs with progressively increasing gate lengths from 1 μm to 10 μm and two charge preamplifiers have been designed and integrated in the same chip. Low-frequency noise and dynamic characteristics of the FETs have been measured. Measurements at 4 K and 77 K of an array of FETs with different gate-lengths have shown that D-FETs from the QED/A process by TriQuint present good noise and dynamic performances. The factor of merit H_f=2.8×10^-26 J obtained at 4 K is better than that of available discrete MESFETs. The preamplifier exhibits fast response and reasonable noise performance despite the use of M-FETs which do not exhibit the best noise performance of the process

Keywords

Schottky gate field effect transistors; gallium arsenide; nuclear electronics; preamplifiers; random noise; semiconductor device noise; 1 to 10 micron; 1/f noise; 2.8×10^-26 J; 4 K; 77 K; D-FETs; GaAs; MESFETs; QED/A process; charge preamplifiers; cryogenic temperatures; dynamic characteristics; factor of merit; gate lengths; low frequency noise; monolithic array; Circuits; Cryogenics; FETs; Gallium arsenide; Geometry; Low-frequency noise; MESFETs; Preamplifiers; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301278

Filename

301278