Title :
Consistent small-signal and RF-noise parameter modelling of carbon doped InP/InGaAs HBT
Author :
Agethen, M. ; Schuller, S. ; Velling, P. ; Brockerhoff, W. ; Tegude, F.-J.
Author_Institution :
Dept. of Solid-State Electron., Gerhard-Mercator-Univ. Duisburg, Germany
Abstract :
In this work a consistent small-signal and rf-noise parameter model of InP/InGaAs HBT is presented. This model is based on the typical three-mesa design of HBT and correlates intrinsic noise sources to specific device regions. Bias dependent investigation of S- and RF-noise parameters proves the consistency of the model.
Keywords :
III-V semiconductors; S-parameters; UHF bipolar transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; semiconductor device noise; HBT; III-V semiconductors; InP-InGaAs:C; RF-noise parameter modelling; S-parameters; bias dependent investigation; device regions; intrinsic noise sources; small-signal parameter model; three-mesa design; Circuit noise; Equivalent circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Noise figure; Noise generators; Semiconductor device noise; Solid modeling; Temperature;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967248
