Ion diode design for IBEST

Author

Greenly, J.B. ; Glidden, S.C. ; Stinnett, R.W.

Author_Institution

Cornell Univ. Ithaca, NY, USA

fYear

1993

fDate

7-9 June 1993

Firstpage

115

Abstract

Summary form only given. The IBEST (Ion Beam Surface Treatment) ion diode design is discussed. This diode will be driven by the Sandia RHEPP (Repetitive High Energy Pulsed Power) facility to produce ion beams for IBEST. The diode is based on magnetically-confined anode plasma (MAP) diodes. The diode operates with a magnetically confined anode plasma produced by inductively driven breakdown of an annular localized gas puff. The resulting plasma is confined at the anode side of an annular magnetically insulated diode gap. The first repetitive version of this diode has been operated in bursts at up to 100 Hz repetition rate. The new IBEST diode represents a second-generation MAP diode, and will attempt to make optimal use of several phenomena discovered in the operation of previous MAP diodes. In particular, the standoff distance from the gas puff to the diode gap is reduced by using magnetic nulls to enforce gas breakdown at the desired location directly in front of the inductive driving coils.

Keywords

surface treatment; IBEST; Ion Beam Surface Treatment; MAP diodes; Repetitive High Energy Pulsed Power; Sandia RHEPP; annular localized gas puff; annular magnetically insulated diode gap; inductive driving coils; inductively driven breakdown; ion diode design; magnetically confined anode plasma; magnetically-confined anode plasma; Anodes; Diodes; Ion beams; Laboratories; Magnetic confinement; Optical pulses; Plasma confinement; Pulsed laser deposition; Surface emitting lasers; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on

Conference_Location

Vancouver, BC, Canada

ISSN

0730-9244

Print_ISBN

0-7803-1360-7

Type

conf

DOI

10.1109/PLASMA.1993.593140

Filename

593140