DocumentCode
1928815
Title
65-145 GHz InP MMIC HEMT medium power amplifiers
Author
Samoska, L. ; Yoke Choy Leong
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
3
fYear
2001
fDate
20-24 May 2001
Firstpage
1805
Abstract
In this paper, we present two MMIC power amplifier designs utilizing InP HEMT technology. The first amplifier covers two full waveguide bands, WR10 (75-110 GHz) and WR8 (90-140 GHz), yielding a maximum output power of at least 25 mW between 65-140 GHz. The second design is optimized for the WR10 waveguide band and provides at least 13 dB of large signal gain over 75-110 GHz, and an output power of 40-50 mW.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave power amplifiers; 13 dB; 25 mW; 40 to 50 mW; 65 to 145 GHz; EHF; HEMT medium power amplifiers; InP; InP HEMT technology; InP MMIC HEMT; MIMIC power amplifier designs; MM-wave ICs; WR10 waveguide band; WR8 waveguide band; Frequency; HEMTs; Indium phosphide; MMICs; Power amplifiers; Power measurement; Probes; Scattering parameters; Semiconductor device measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967257
Filename
967257
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