Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes

Author

Na Ren ; Kuang Sheng ; Junming Zhang ; Fangzheng Peng

Author_Institution

Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

2871

Lastpage

2876

Abstract

In this paper, a current source driver is presented for IGBT modules. For conventional voltage source gate driver, the influence of the gate drive resistance on switching performances is investigated for IGBT modules with SiC-Schottky freewheeling diodes. The influence on turn-off switching losses is marginal while a reduction by a factor of 3 can be achieved for turn-on switching losses when the gate drive resistance reduced from 40Ω to 10Ω. The current source driver can achieve a turn-on loss reduction by a factor of 14 when compared to the conventional gate driver with 40Ω gate drive resistance, without a large I_rr due to the SiC-Schottky freewheeling diode. Experimental results are presented to show the IGBT switching performance with this proposed fast gate driver.

Keywords

Schottky diodes; insulated gate bipolar transistors; IGBT modules; current source driver; gate drive investigations; gate drive resistance; resistance 40 ohm to 10 ohm; silicon carbide-Schottky freewheeling diodes; turn-off switching losses; turn-on switching losses; voltage source gate driver; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Schottky diodes; Switches; Switching loss; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6647074

Filename

6647074