Title :
A high temperature, double-sided cooling SiC power electronics module
Author :
Zhang, Haijun ; Ang, Simon S. ; Mantooth, Homer Alan ; Krishnamurthy, S.
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
A high temperature, wire-bondless power electronics module with a double-sided cooling capability is proposed and successfully fabricated. In this module, a low-temperature co-fired ceramic (LTCC) substrate was used as the dielectric and chip carrier. Conducting vias were created on the LTCC carrier to realize the interconnection. The absent of a base plate reduced the overall thermal resistance and also improved the fatigue life by eliminating a large-area solder layer. Nano silver paste was used to attach power devices to the DBC substrate as well as to pattern the gate connection. Finite element simulations were used to compare the thermal performance to several reported double-sided power modules. Electrical measurements of a SiC MOSFET and SiC diode switching position demonstrated the functionality of the module.
Keywords :
ceramics; cooling; integrated circuit packaging; power electronics; silicon compounds; DBC substrate; LTCC substrate; chip carrier; dielectric carrier; double-sided cooling silicon carbide power electronics module; double-sided power modules; fatigue life; finite element simulations; high temperature silicon carbide power electronics module; large-area solder layer elimination; low-temperature cofired ceramic substrate; nanosilver paste; silicon carbide MOSFET; silicon carbide diode switching position; wire-bondless power electronics module; Cooling; Junctions; Logic gates; MOSFET; Multichip modules; Silicon carbide; Substrates;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6647075
