Title :
Anti-series normally-On SiC JFETs operating as bidirectional switches
Author :
Saadeh, M. ; Chinthavali, Madhu Sudhan ; Ozpineci, Burak ; Mantooth, Homer Alan
Author_Institution :
Power Electron. & Electr. Machinery Res. Group, Oak Ridge Nat. Lab., Oak Ridge, TN, USA
Abstract :
Ac-ac matrix converters and cycloconverters require bi-directional switches, which are typically formed by two antiparallel thyristors or a two-switch (IGBT/MOSFETs) two-diode configuration. As silicon carbide (SiC) and gallium nitride (GaN) devices become more available, it is possible to have higher voltage FETs with low conduction and switching losses and reverse conduction capability, which allows the elimination of the diodes in a bidirectional switch. This paper will investigate a bidirectional switch formation that is formed by using two normally-on SiC JFETs in anti-series with no anti-parallel diodes.
Keywords :
AC-AC power convertors; III-V semiconductors; cycloconvertors; field effect transistor switches; gallium compounds; junction gate field effect transistors; matrix convertors; power semiconductor switches; silicon compounds; wide band gap semiconductors; AC-AC matrix converters; IGBT; MOSFET; antiparallel thyristors; antiseries normally-on SiC JFET; bidirectional switch formation; cycloconverters; gallium nitride device; low conduction loss; reverse conduction capability; silicon carbide device; switching loss; two-diode configuration; Capacitance; JFETs; Logic gates; Schottky diodes; Silicon carbide; Switches; Voltage measurement; Anti-Series; Bidirectional; Cycloconverter; JFET; Matrix Converter; Normall-On; SiC;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
DOI :
10.1109/ECCE.2013.6647077
