Title :
Low-Frequency Noise in GaxInxP/GaAs Heterojunction Bipolar Transistors
Author :
Markus, HA W. ; Kleinpenning, T.G.M.
Author_Institution :
Eindhoven University of Technology, Department of Electrical Engineering, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Abstract :
The 1/f noise in a series of Ga0.5In0.5P/GaAs heterojunction bipolar power transistors with different emitter geometries is investigated. The main 1/f noise generator proved to be the 1/f noise in the base current SIb. The base current is modeled with an ideal (ideality factor 1) and a non-ideal (ideality factor in the range of 1.5-2.8) component. The 1/f noise SIb is associated with the non-ideal base current IBni and is proportional to the current squared. The results for SIb/I2Bni show a large spread between the transistors. Due to this spread it is not possible to be conclusive about the emitter area dependence of SIb/I2Bni.
Keywords :
Circuits; Fingers; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise measurement; Power transistors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
