DocumentCode
1929113
Title
Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient
Author
Lo, G.Q. ; Ting, W. ; Ahn, J. ; Kwong, D.L.
Author_Institution
Microelectronics Research Center, The University of Texas at Austin
fYear
1991
fDate
17-19 June 1991
Keywords
CMOS technology; Degradation; Dielectrics; Furnaces; Isolation technology; MOSFET circuits; Microelectronics; Oxidation; Stress control; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1991. 49th Annual
Conference_Location
Boulder, CO, USA
Print_ISBN
0-87942-647-0
Type
conf
DOI
10.1109/DRC.1991.664708
Filename
664708
Link To Document