DocumentCode :
1929113
Title :
Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient
Author :
Lo, G.Q. ; Ting, W. ; Ahn, J. ; Kwong, D.L.
Author_Institution :
Microelectronics Research Center, The University of Texas at Austin
fYear :
1991
fDate :
17-19 June 1991
Keywords :
CMOS technology; Degradation; Dielectrics; Furnaces; Isolation technology; MOSFET circuits; Microelectronics; Oxidation; Stress control; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664708
Filename :
664708
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1929113
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