Title :
Diffusion of Boron in Polycrystalline Silicon
Author :
Nédélec, S. ; Mathiot, D. ; Gauneau, M.
Author_Institution :
France Télécom - CNET Grenoble, BP 98, 38243 Meylan Cedex, France; SGS THOMSON Microelectronics, BP 16, 38921 Crolles Cedex, France
Abstract :
The diffusion of boron in polycrystalline silicon films has been studied over the 700-1000°C temperature range for two different grain sizes and doses. Secondary Ion Mass Spectroscopy was used to measure the concentration profiles after ion implantation and after annealing steps. By fitting experimental and simulated profiles we are able to extract for boron both diffusivity in grain boundaries and segregation coefficient between grain boundary and grain.
Keywords :
Annealing; Boron; CMOS technology; Fabrication; Grain boundaries; Mass spectroscopy; Performance evaluation; Silicon; Storms; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
