Physics and compact modeling of SOI substrates with buried ground plane (GPSOI) for substrate noise suppression

The physical mechanisms responsible for superior crosstalk suppression are identified in a new class of silicon-on-insulator substrate (GPSOI) that incorporates a buried metallic ground plane below the active silicon and buried oxide layers. It has been shown that this technology exhibits a factor of ten reduction in crosstalk power between components through the substrate compared to existing state-of-the-art silicon-based substrates using standard s/sub 21/ magnitude measurements in a microwave coplanar transmission test structure. The dominant crosstalk mechanisms are identified and compared to other existing crosstalk suppression technologies using numerical electromagnetic simulations and lumped element compact model development.