Effectiveness of N/sub 2/O-nitrided Gate Oxide for High Performance Cmosfets

Author

Hayashi, T. ; Ohno, M. ; Uchiyama, A. ; Fukuda, H. ; Iwabuchi, T. ; Ohno, S.

Author_Institution

Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., Japan

fYear

1991

fDate

17-19 June 1991

Keywords

Acceleration; CMOSFETs; Charge pumps; Electron devices; Electron traps; Frequency; MOSFETs; Stress; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1991. 49th Annual

Conference_Location

Boulder, CO, USA

Print_ISBN

0-87942-647-0

Type

DOI

10.1109/DRC.1991.664709

Filename

664709

Link To Document