Title :
Effectiveness of N/sub 2/O-nitrided Gate Oxide for High Performance Cmosfets
Author :
Hayashi, T. ; Ohno, M. ; Uchiyama, A. ; Fukuda, H. ; Iwabuchi, T. ; Ohno, S.
Author_Institution :
Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., Japan
Keywords :
Acceleration; CMOSFETs; Charge pumps; Electron devices; Electron traps; Frequency; MOSFETs; Stress; Transconductance;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664709
