DocumentCode
1929512
Title
Development of high speed Copper CMP slurry for TSV application based on friction analysis
Author
Amanokura, Jin ; Ono, Hiroshi ; Hombo, Kyoko
Author_Institution
Semicond. Mater. Div., Hitachi Chem. Co., Ltd., Hitachi, Japan
fYear
2010
fDate
24-26 Aug. 2010
Firstpage
1
Lastpage
4
Abstract
In order to obtain high speed Cu CMP process for TSV application, we have developed new Copper CMP slurry through friction analysis of Cu reaction layer with an AFM technique. Lateral Modulation Friction Force Microscope (LM-FFM) is the one that is able to measure the friction properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and Cu reaction layer under the 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry makes the frictionally easy-removable Cu reaction layer.
Keywords
atomic force microscopy; chemical mechanical polishing; integrated circuit interconnections; slurries; three-dimensional integrated circuits; AFM technique; TSV application; friction analysis; high speed copper CMP slurry; lateral modulation friction force microscope; Chemicals; Copper; Friction; Rough surfaces; Slurries; Surface roughness; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan, 2010 IEEE
Conference_Location
Tokyo
Print_ISBN
978-1-4244-7593-3
Type
conf
DOI
10.1109/CPMTSYMPJ.2010.5679874
Filename
5679874
Link To Document