DocumentCode :
1929512
Title :
Development of high speed Copper CMP slurry for TSV application based on friction analysis
Author :
Amanokura, Jin ; Ono, Hiroshi ; Hombo, Kyoko
Author_Institution :
Semicond. Mater. Div., Hitachi Chem. Co., Ltd., Hitachi, Japan
fYear :
2010
fDate :
24-26 Aug. 2010
Firstpage :
1
Lastpage :
4
Abstract :
In order to obtain high speed Cu CMP process for TSV application, we have developed new Copper CMP slurry through friction analysis of Cu reaction layer with an AFM technique. Lateral Modulation Friction Force Microscope (LM-FFM) is the one that is able to measure the friction properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and Cu reaction layer under the 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry makes the frictionally easy-removable Cu reaction layer.
Keywords :
atomic force microscopy; chemical mechanical polishing; integrated circuit interconnections; slurries; three-dimensional integrated circuits; AFM technique; TSV application; friction analysis; high speed copper CMP slurry; lateral modulation friction force microscope; Chemicals; Copper; Friction; Rough surfaces; Slurries; Surface roughness; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CPMT Symposium Japan, 2010 IEEE
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-7593-3
Type :
conf
DOI :
10.1109/CPMTSYMPJ.2010.5679874
Filename :
5679874
Link To Document :
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