• DocumentCode
    1929512
  • Title

    Development of high speed Copper CMP slurry for TSV application based on friction analysis

  • Author

    Amanokura, Jin ; Ono, Hiroshi ; Hombo, Kyoko

  • Author_Institution
    Semicond. Mater. Div., Hitachi Chem. Co., Ltd., Hitachi, Japan
  • fYear
    2010
  • fDate
    24-26 Aug. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In order to obtain high speed Cu CMP process for TSV application, we have developed new Copper CMP slurry through friction analysis of Cu reaction layer with an AFM technique. Lateral Modulation Friction Force Microscope (LM-FFM) is the one that is able to measure the friction properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and Cu reaction layer under the 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry makes the frictionally easy-removable Cu reaction layer.
  • Keywords
    atomic force microscopy; chemical mechanical polishing; integrated circuit interconnections; slurries; three-dimensional integrated circuits; AFM technique; TSV application; friction analysis; high speed copper CMP slurry; lateral modulation friction force microscope; Chemicals; Copper; Friction; Rough surfaces; Slurries; Surface roughness; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan, 2010 IEEE
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-7593-3
  • Type

    conf

  • DOI
    10.1109/CPMTSYMPJ.2010.5679874
  • Filename
    5679874